2SD1026

? TYPICAL RDS(on) = 0.021 ?
? EXCEPTIONAL dv/dt CAPABILITY
? 100% AVALANCHE TESTED
? LOW GATE CHARGE AT 100 o
C
? APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ?Single Feature
Size?? strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
? HIGH CURRENT, HIGH SPEED SWITCHING
? SOLENOID AND RELAY DRIVERS
? MOTOR CONTROL, AUDIO AMPLIFIERS
? DC-DC & DC-AC CONVERTERS
? AUTOMOTIVE ENVIRONMENT